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- W2532492841 abstract "We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al/sub 2/O/sub 3/ film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al/sub 2/O/sub 3/ as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al/sub 2/O/sub 3//AlGaN interface with low interface trap density. The Al/sub 2/O/sub 3/ passivation effect is also studied by sheet resistance measurement and short pulse drain characterization." @default.
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- W2532492841 date "2005-12-10" @default.
- W2532492841 modified "2023-09-25" @default.
- W2532492841 title "GaN MOS-HEMT using atomic layer deposition Al/sub 2/O/sub 3/ as gate dielectric and surface passivation" @default.
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- W2532492841 doi "https://doi.org/10.1109/lechpd.2004.1549689" @default.
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