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• W2533137729 endingPage "05FA07" @default.
• W2533137729 startingPage "05FA07" @default.
• W2533137729 abstract "Abstract We have investigated the position dependence of crystalline quality and defect distribution in a semipolar <?CDATA $(20bar{2}1)$?> hydride vapor phase epitaxy (HVPE)-GaN film grown on a <?CDATA $(22bar{4}3)$?> patterned sapphire substrate (PSS). Position-dependent X-ray microdiffraction (XRMD) measurement clearly revealed the periodic fluctuation of the <?CDATA $20bar{2}1$?> lattice plane tilting in HVPE-GaN films. This correlated with the periodic distribution of ( a + c )-type dislocations owing to the patterning pitch of the PSS as confirmed by transmission electron microscopy (TEM). In the three-dimensional reciprocal lattice space map, the diffuse streak exactly along the c -axis can be clearly detected, indicating the presence of basal plane stacking faults in HVPE-GaN films. Furthermore, we have quantitatively estimated the defect densities from the results of XRMD and TEM measurements. From the obtained results of XRMD and TEM measurements, the fluctuation of the lattice plane tilting and the defect distribution in <?CDATA $(20bar{2}1)$?> HVPE-GaN films grown on two types of metalorganic vapor phase epitaxy-GaN templates will be discussed in detail." @default.
• W2533137729 created "2016-10-28" @default.
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• W2533137729 date "2016-04-12" @default.
• W2533137729 modified "2023-09-24" @default.
• W2533137729 title "Positional dependence of defect distribution in semipolar hydride vapor phase epitaxy-GaN films grown on patterned sapphire substrates" @default.
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• W2533137729 doi "https://doi.org/10.7567/jjap.55.05fa07" @default.
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