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- W2533468880 abstract "In this paper, we report the selective area synthesis of gallium oxide (Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) nano-wires on gold patterned gallium arsenide (GaAs) substrate which have been treated by ion implantation. The GaAs substrate was first treated with implantation of acetylene (C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) ions, and then followed by coating the surface with a 2nm thick gold film. After rapid thermal anneal (RTA) at 950degC for 15 seconds, Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> nanowires were found on gold patterned surface. The Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> nanowires with diameters of 50-500nm were examined by Raman spectroscopy, scanning electron microscopy (SEM), and cathodoluminescence (CL). We also measured the I-V behavior for Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> material under the excitation by various laser radiations, hence demonstrating its potential applications as UV sensors. In addition, nano-particles of gold were found at the tip of the nano-wires, suggesting that a vapor-liquid-solid (VLS) mechanism was involved." @default.
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- W2533468880 date "2007-01-01" @default.
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- W2533468880 title "Selective-area Growth of Gallium Oxide Nanowires:Synthesis, Characterization, and Device Application" @default.
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- W2533468880 doi "https://doi.org/10.1109/edssc.2007.4450337" @default.
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