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• W2533731489 endingPage "095902" @default.
• W2533731489 startingPage "095902" @default.
• W2533731489 abstract "In this paper, different MgO films were deposited on a GaAs substrate by atom layer deposition (ALD), which can passivate the surface state of GaAs. From XPS results, the band structure of MgO/GaAs can be indexed to type I. Based on band alignment, the excitons could not diffuse and created nonradiative centers, which were all limited and then recombined at the MgO/GaAs interface, thus the emission intensity of the 100 nm MgO film coated sample was about 3 times higher than the uncoated sample." @default.
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• W2533731489 date "2015-09-08" @default.
• W2533731489 modified "2023-10-16" @default.
• W2533731489 title "Surface passivation of GaAs using atomic layer deposition grown MgO" @default.
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• W2533731489 doi "https://doi.org/10.1088/2053-1591/2/9/095902" @default.
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