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• W2534913586 abstract "Abstract Phosphorus-doped hydrogenated silicon nitride (SiN x :H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H 2 /Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN x :H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H 2 /Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H 2 /Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H 2 /Ar ratio to 100/100, P-doped SiN x :H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H 2 -Ar mixed dilution on the properties of P-doped SiN x :H thin films." @default.
• W2534913586 created "2016-10-28" @default.
• W2534913586 creator A5057117256 @default.
• W2534913586 creator A5087838135 @default.
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• W2534913586 date "2017-02-01" @default.
• W2534913586 modified "2023-09-23" @default.
• W2534913586 title "H2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix" @default.
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• W2534913586 doi "https://doi.org/10.1016/j.apsusc.2016.10.082" @default.
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