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• W2535045498 abstract "In this paper, a novel method for preparing atomically smooth gallium nitride (GaN) wafer surfaces which involves chemical mechanical polishing with a non-noble metal catalyst (Fe-N x ) in acidic slurry is presented. It was confirmed that non-noble metal catalyst based slurry could be used for gallium face of GaN. Atomic force microscope images of the processed surface indicate that an atomically flat surface with Ra=0.0518 nm was achieved after planarization and the processed surface has an atomic step-terrace structure. Besides, the rate of removal of the GaN surface was measured to be approximately 66.9 nm/h, more than triple times higher than that nothing was used as catalyst." @default.
• W2535045498 created "2016-10-28" @default.
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• W2535045498 date "2014-11-01" @default.
• W2535045498 modified "2023-10-18" @default.
• W2535045498 title "Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-N<inf>x</inf>/C) in acid solution" @default.
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• W2535045498 doi "https://doi.org/10.1109/icpt.2014.7017289" @default.
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