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- W2535412975 abstract "In this paper, the impact of a spacer-drain overlap on the subthreshold characteristics is studied for a silicon n-channel tunnel field-effect transistor, in which the dominant carrier tunneling occurs in a direction that is in-line with the gate electric-field. It is demonstrated that subthreshold swing is significantly reduced by reducing the impact of fringe-induced barrier lowering by appropriate designing of the drain-side spacer. Short-channel effects, such as drain-induced barrier lowering (DIBL), are also greatly suppressed in it. Results of the investigation on the scaling properties of such devices are also reported." @default.
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- W2535412975 date "2012-12-01" @default.
- W2535412975 modified "2023-09-26" @default.
- W2535412975 title "Spacer-drain overlap dependence of subthreshold characteristics for tunnel field-effect transistors based on vertical tunneling" @default.
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- W2535412975 doi "https://doi.org/10.1109/icemelec.2012.6636225" @default.
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