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• W2535526400 abstract "A novel technique to tailor the nitrogen profile in HfO/sub 2/ gate dielectric has been developed. Nitrogen was incorporated in the upper layer of HfO/sub 2/ using a reactive sputtering method, followed by a reoxidation anneal. The resulting dielectrics showed good thermal stability, boron penetration suppression, low interfacial trap density, plus lower hysteresis and improved MOSFET characteristics, in comparison to both non-nitrided and bottom nitrided (via Si-surface nitridation with NH/sub 3/) devices." @default.
• W2535526400 created "2016-10-28" @default.
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• W2535526400 date "2002-11-13" @default.
• W2535526400 modified "2023-09-23" @default.
• W2535526400 title "Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance" @default.
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• W2535526400 doi "https://doi.org/10.1109/iedm.2001.979593" @default.
• W2535526400 hasPublicationYear "2002" @default.
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