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- W2535593012 abstract "Hot-electron gate current in SOI nMOSFETs has been measured as a function of back-gate bias, silicon film thickness, and substrate doping. Gate currents are reduced in fully-depleted SOI and in thinner silicon films, indicating a reduction in drain electric field, as compared to partially-depleted and bulk devices. Hot-electron degradation confirms some of the trends observed in gate current, however, additional degradation mechanisms in SOI complicate the evaluation of device lifetime.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2535593012 date "1992-01-01" @default.
- W2535593012 modified "2023-09-27" @default.
- W2535593012 title "Hot-carrier effects in fully-depleted SOI nMOSFETs" @default.
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- W2535593012 doi "https://doi.org/10.1109/iedm.1992.307376" @default.
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