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- W2535753361 abstract "A thin film silicon on insulator BiCMOS technology has been developed for low power applications. The technology is based on a manufacturable, near-fully-depleted 0.5 /spl mu/m CMOS process with the lateral bipolar device integrated as a drop-in module for BiCMOS circuits. The bipolar device structure emphasizes use of a silicided polysilicon base contact to reduce base resistance and minimize current crowding effects. A split-oxide spacer integration is used to define the bipolar base and emitter widths independently. Low current ECL gate speeds up to 2/spl times/ faster than bulk double-polysilicon self-aligned bipolar circuits have been demonstrated. >" @default.
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- W2535753361 date "2002-12-30" @default.
- W2535753361 modified "2023-09-26" @default.
- W2535753361 title "TFSOI BiCMOS technology for low power applications" @default.
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- W2535753361 doi "https://doi.org/10.1109/iedm.1993.347313" @default.
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