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- W2536443899 abstract "THIS paper is based upon the premise that metallic impurities diffuse into the bulk semiconductor regions of semiconductor junction devices, within the limit imposed by the solid solubility of these impurities. It will be shown that the subsequent ionization of these unwanted impurities causes certain electronic parameters of the junction to be altered in a predictable way; for example, the addition of these ionizable impurities near the physical interface at the junction causes a change in the electronic structure of the depletion layer which is clearly evidenced by shifts in reverse-biased junction capacitance. The capacitive technique of measuring solid-state diffusion is examined in detail, and its application to the problem of describing failure in semiconductor junction devices is set forth. The diffusion process is assumed to be governed by Fick's diffusion equation. As a first approximation, a simple one-dimensional diffusion model has been proposed, and the equations (Fick, Poisson, and capacitance) consistent with such a model are solved, simultaneously, to yield an expression for junction capacitance as a function of initial resistivities, diffusion constants, bias voltages, and diffusion time. The Burroughs 220 computer has been used to provide numerical results for a large number of sets of variables. Successive models which have been proposed seem to be more comprehensive, since they take into consideration additional ways in which impurities may be moved about in the vicinity of the junction. One such way is the transport of ionic impurities under the influence of an applied external field." @default.
- W2536443899 created "2016-10-28" @default.
- W2536443899 creator A5069539094 @default.
- W2536443899 date "1963-09-01" @default.
- W2536443899 modified "2023-10-16" @default.
- W2536443899 title "Solid-State Thermal Diffusion: A Contributor to Degradation of Semiconductor Junction Devices" @default.
- W2536443899 cites W2970626787 @default.
- W2536443899 doi "https://doi.org/10.1109/irps.1963.362241" @default.
- W2536443899 hasPublicationYear "1963" @default.
- W2536443899 type Work @default.
- W2536443899 sameAs 2536443899 @default.
- W2536443899 citedByCount "0" @default.
- W2536443899 crossrefType "proceedings-article" @default.
- W2536443899 hasAuthorship W2536443899A5069539094 @default.
- W2536443899 hasConcept C108225325 @default.
- W2536443899 hasConcept C121332964 @default.
- W2536443899 hasConcept C147789679 @default.
- W2536443899 hasConcept C167781694 @default.
- W2536443899 hasConcept C171250308 @default.
- W2536443899 hasConcept C17525397 @default.
- W2536443899 hasConcept C178790620 @default.
- W2536443899 hasConcept C185592680 @default.
- W2536443899 hasConcept C192562407 @default.
- W2536443899 hasConcept C204530211 @default.
- W2536443899 hasConcept C26873012 @default.
- W2536443899 hasConcept C2779227376 @default.
- W2536443899 hasConcept C30066665 @default.
- W2536443899 hasConcept C37668627 @default.
- W2536443899 hasConcept C49040817 @default.
- W2536443899 hasConcept C67337642 @default.
- W2536443899 hasConcept C69357855 @default.
- W2536443899 hasConcept C71987851 @default.
- W2536443899 hasConcept C79635011 @default.
- W2536443899 hasConcept C97355855 @default.
- W2536443899 hasConcept C98446981 @default.
- W2536443899 hasConceptScore W2536443899C108225325 @default.
- W2536443899 hasConceptScore W2536443899C121332964 @default.
- W2536443899 hasConceptScore W2536443899C147789679 @default.
- W2536443899 hasConceptScore W2536443899C167781694 @default.
- W2536443899 hasConceptScore W2536443899C171250308 @default.
- W2536443899 hasConceptScore W2536443899C17525397 @default.
- W2536443899 hasConceptScore W2536443899C178790620 @default.
- W2536443899 hasConceptScore W2536443899C185592680 @default.
- W2536443899 hasConceptScore W2536443899C192562407 @default.
- W2536443899 hasConceptScore W2536443899C204530211 @default.
- W2536443899 hasConceptScore W2536443899C26873012 @default.
- W2536443899 hasConceptScore W2536443899C2779227376 @default.
- W2536443899 hasConceptScore W2536443899C30066665 @default.
- W2536443899 hasConceptScore W2536443899C37668627 @default.
- W2536443899 hasConceptScore W2536443899C49040817 @default.
- W2536443899 hasConceptScore W2536443899C67337642 @default.
- W2536443899 hasConceptScore W2536443899C69357855 @default.
- W2536443899 hasConceptScore W2536443899C71987851 @default.
- W2536443899 hasConceptScore W2536443899C79635011 @default.
- W2536443899 hasConceptScore W2536443899C97355855 @default.
- W2536443899 hasConceptScore W2536443899C98446981 @default.
- W2536443899 hasLocation W25364438991 @default.
- W2536443899 hasOpenAccess W2536443899 @default.
- W2536443899 hasPrimaryLocation W25364438991 @default.
- W2536443899 hasRelatedWork W1670593018 @default.
- W2536443899 hasRelatedWork W2025695155 @default.
- W2536443899 hasRelatedWork W2046350360 @default.
- W2536443899 hasRelatedWork W2048245142 @default.
- W2536443899 hasRelatedWork W2056620226 @default.
- W2536443899 hasRelatedWork W2083708562 @default.
- W2536443899 hasRelatedWork W2132305632 @default.
- W2536443899 hasRelatedWork W2591895194 @default.
- W2536443899 hasRelatedWork W4239732463 @default.
- W2536443899 hasRelatedWork W4243651874 @default.
- W2536443899 isParatext "false" @default.
- W2536443899 isRetracted "false" @default.
- W2536443899 magId "2536443899" @default.
- W2536443899 workType "article" @default.