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- W2536568619 abstract "The single electron transistor (SET) is a key element in single electronics where device operation is based on one-by-one electron manipulation utilizing the Coulomb blockade effect. However, SET operation has so far been limited to below 4 K because even the smallest capacitance C of the SET has been about 100 aF. This means the requirement of charging energy e/sup 2/(2C) being much larger than the thermal energy could only be met at very low temperatures. We report here a Si-SET whose capacitance is only about 2 aF. Owing to this small capacitance, the Si-SET shows conductance oscillation even at room temperature. >" @default.
- W2536568619 created "2016-10-28" @default.
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- W2536568619 date "2002-12-17" @default.
- W2536568619 modified "2023-09-22" @default.
- W2536568619 title "Conductance oscillations of a Si single electron transistor at room temperature" @default.
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- W2536568619 doi "https://doi.org/10.1109/iedm.1994.383257" @default.
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