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• W2536661930 abstract "We have developed a physics based model for negative capacitance (NC) FinFETs by coupling the Landau-Khalatnikov model of ferroelctric materials with the standard BSIM-CMG model of FinFET. We apply our model to thin film Y-HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> (yttrium-doped hafnium oxide) based NC-FinFETs designed using state of the art 22nm technology node FinFETs. Using the same ferroelectric material, we demonstrate a device design that can match the I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</inf> of the 22nm technology node at 50% reduced V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DD</inf> with a simultaneous I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</inf> improvement of ≈ 83%. Further, we analyze the impact of variation of ferroelectric properties, remnant polarization (P <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>r</inf> ) and coercive electric field (E <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</inf> ) on the device figures of merit which can lay a very useful guideline towards investigation of new ferroelectric materials for NC-FinFET. We investigate the impact of scaling the ferroelectric thickness on the electrical characteristics of NC-FinFET. We critically examine an interesting phenomenon of “negative DIBL” which leads to reduced off-current (I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</inf> ), increased threshold voltage (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</inf> ), yet increased on-current (I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</inf> ) at higher drain biases. This effect gets pronounced with increasing ferroelectric thickness. Finally, we compare the logic figures of merit of the NC-FinFET with those of the reference FinFET." @default.
• W2536661930 created "2016-10-28" @default.
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• W2536661930 date "2016-09-01" @default.
• W2536661930 modified "2023-09-27" @default.
• W2536661930 title "Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X I<inf>ON</inf> using compact modeling approach" @default.
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• W2536661930 doi "https://doi.org/10.1109/esscirc.2016.7598240" @default.
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