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- W2536919057 abstract "Using an commercially available atmospheric pressure chemical vapor deposition (APCVD), n-p-n Si/SiGe/Si heterojunction bipolar transistors (HBTs) with arsenic-implanted polysilicon-emitter, which is isolated by polysilicon-filled trench and LOCOS, has been fabricated. At atmospheric pressure, Si/SiGe bilayer was deposited using SiH 4 -based process on the LOCOS-patterned wafer. Mole fraction of Ge in the SiGe base was linearly graded from 0 at the emitter side to either 0.15 or 0.2 at the collector side. Regarding the trade-off between common-emitter current gain (s) and Early voltage (Va) as well as cutoff frequency (f T ) and collector-emitter breakdown voltage (BVceo), device was designed for the optimal performance. Titanium silicide (TiSi 2 ) layer is used as a base electrode instead of the doped polysilicon. In addition, in order to achieve more complete activation of arsenic dopant in polysilicon-emitter and simultaneously suppress boron outdiffusion from the SiGe base to the adjacent Si, condition of the thermal annealing to drive-in the arsenic dopant was compromised to be the combination of furnace annealing at 840°C for 20 minutes and rapid thermal annealing at either 900 or 950°C for 20 seconds. The Si/Si 0.85 Ge 0-0.15 / /Si HBT with the mask size of 1×4?m2 emitter typically shows nearly flat s of 118, Early voltage of 60, BVceo of 7.0V, and f T peak at 25GHz, while Si/Si 0.8 Ge 0-0.2 /Si HBT exhibits s peak at 2000, Va of 100V, BVceo of 5.5V, and f T peak at 27GHz. To author's knowledge, the value of s*Va of our device is highest among the reported data." @default.
- W2536919057 created "2016-10-28" @default.
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- W2536919057 date "1995-09-01" @default.
- W2536919057 modified "2023-09-27" @default.
- W2536919057 title "Atmospheric Pressure CVD-Grown SiGe Base, Polysilicon-Emitter Heterojunction Bipolar Transistor" @default.
- W2536919057 hasPublicationYear "1995" @default.
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