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- W2537170304 abstract "High-κ/Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ/Ge interface. However, these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide (SRPO) method to improve the thermodynamic stability of the high-κ/Ge interface. The x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) results indicate that the GeO volatilization of the high-κ/Ge gate stack is efficiently suppressed after 500 °C annealing, and the electrical characteristics are greatly improved." @default.
- W2537170304 created "2016-10-28" @default.
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- W2537170304 date "2016-02-01" @default.
- W2537170304 modified "2023-09-27" @default.
- W2537170304 title "Improvement in electrical properties of high- κ film on Ge substrate by an improved stress relieved pre-oxide method" @default.
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- W2537170304 doi "https://doi.org/10.1088/1674-1056/25/2/027702" @default.
- W2537170304 hasPublicationYear "2016" @default.
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