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- W2538127136 abstract "In this paper, we will demonstrate a novel approach to incorporate Si and/or Ge nanostructures into crystalline rare earth oxides using molecular beam epitaxy (MBE) for nanoelectronic devices application. By efficiently exploiting the growth kinetics during MBE we succeeded in creating semiconductor nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots (QDs) to the quantum wells, where the particles are confined in one dimension. The crystalline rare earth oxide that has been used in this study is the epitaxial gadolinium oxide (Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ). The monolithic heterostructures comprised of Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -Ge/Si-Gd <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> grown on Si substrate exhibit excellent crystalline quality with atomically sharp interface." @default.
- W2538127136 created "2016-10-28" @default.
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- W2538127136 date "2010-12-01" @default.
- W2538127136 modified "2023-10-16" @default.
- W2538127136 title "Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications" @default.
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- W2538127136 doi "https://doi.org/10.1109/icm.2010.5696129" @default.
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