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- W2538663670 abstract "The atomic layer epitaxial (ALE) growth of thin GaAs layers and their inclusion in quantum well devices is described. Uniform, high-quality materials have been grown by a modification of the MOCVD process that allows a single-monolayer control over layer thickness by relying on surface-controlled processes. Laser excitation has been used during ALE growth to deposit ultrathin layers of GaAs layers selectively and to form buried heterostructures. The growth techniques, materials and device properties, and applications to new areas are described. >" @default.
- W2538663670 created "2016-10-28" @default.
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- W2538663670 date "2003-01-06" @default.
- W2538663670 modified "2023-09-26" @default.
- W2538663670 title "Atomic layer epitaxy for the growth of heterostructures" @default.
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- W2538663670 doi "https://doi.org/10.1109/iedm.1988.32857" @default.
- W2538663670 hasPublicationYear "2003" @default.
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