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- W2538867828 abstract "The authors discuss the major reasons and solutions for selectivity loss during selective tungsten deposition. By applying these solutions to the selective process the nucleation count on the dielectric can be reduced to less than 1 nuclei/cm/sup 2/. In addition, a novel process has been developed in most photoresist is used as a sacrificial layer and an antinucleation layer is used to reduce the tungsten nucleation count on the surface of the dielectric to 0 nuclei/cm/sup 2/. The chemistry involved in producing a low-resistance contact on 0.7- mu m-diameter contacts is also discussed. Electrical test results showing contact resistance data on 0.7- mu m-diameter via chains with corresponding bridging data are presented. >" @default.
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- W2538867828 date "2002-12-09" @default.
- W2538867828 modified "2023-09-26" @default.
- W2538867828 title "Selective CVD tungsten as an alternative to blanket tungsten for submicron plug applications on VLSI circuits" @default.
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- W2538867828 doi "https://doi.org/10.1109/iedm.1991.235450" @default.
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