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- W2539247281 abstract "An advanced CMOS design, where a raised source/drain and contact windows are formed over the field oxide is realized by using P-doped SiGe and B-doped Si selective epitaxial growth techniques. Excellent short-channel characteristics and reduced parasitic drain junction capacitance were obtained. NMOS and PMOSFETs with an effective channel length of 0.12 /spl mu/m and ultra-shallow junctions with a depth of 25 nm were fabricated. These devices had a low extension resistance of about 370 /spl Omega//sq." @default.
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- W2539247281 date "2002-11-23" @default.
- W2539247281 modified "2023-09-24" @default.
- W2539247281 title "A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-μm CMOS ULSIs" @default.
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- W2539247281 doi "https://doi.org/10.1109/iedm.1997.650428" @default.
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