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• W2539510752 abstract "Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby hafnium atom." @default.
• W2539510752 created "2016-11-04" @default.
• W2539510752 creator A5011597387 @default.
• W2539510752 creator A5070965384 @default.
• W2539510752 date "2007-10-01" @default.
• W2539510752 modified "2023-09-25" @default.
• W2539510752 title "Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO<inf>2</inf> based MOSFETs" @default.
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• W2539510752 doi "https://doi.org/10.1109/irws.2007.4469232" @default.
• W2539510752 hasPublicationYear "2007" @default.
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