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• W2539733186 abstract "Negative bias temperature instability (NBTI) in MOS capacitors has been investigated using a novel NBTI measurement method, named two-point capacitance-voltage (TPCV). This method is based on C-V techniques and allows one to independently separate the interface (ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ) and oxide traps (ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</sub> ) induced by NBTI. For the first time, to our knowledge, such a method is proposed. The TPCV method permits a broad investigation in reliability studies by exploiting changes in capacitance. It is based on a simple theoretical concept and consists of measuring the evolution of capacitance at two points; the first at the flat-band voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> ) and the second at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> + ΔV. By assuming a linear CV characteristic variation between V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> and mid-gap voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>mg</sub> ), the relations of voltage shifts components (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fb</sub> , V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>mg</sub> , and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ) are developed. The experimental results have shown that the proposed approach allows reducing the recovery amount compared to full CV characteristics. The trapped charge, ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</sub> and ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> present a power law stress-time-dependence. In addition, the results have shown a quasi different kinetic of interface state generation as well as oxide trapped charges, while the component ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</sub> is greater than ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ." @default.
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• W2539733186 date "2012-10-01" @default.
• W2539733186 modified "2023-09-27" @default.
• W2539733186 title "Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization" @default.
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• W2539733186 doi "https://doi.org/10.1109/iirw.2012.6468949" @default.
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