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- W2539982273 abstract "A novel BI-EPROM structure, which has a vertical PNP bipolar transistor in the drain of the conventional EPROM cell, is proposed for future low-voltage and high-speed nonvolatile memories. In the read operation, the large cell current is obtained by the embedded bipolar function. Moreover, since its drain is made of an N-base, it has a high immunity against the soft-write phenomenon and can tolerate a higher channel current. It can be programmed by applying high voltages to both the source and the gate, while the drain is biased 0 V or negative voltage. Its feasibility is confirmed by a test vehicle with a 0.8 mu m technology. >" @default.
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- W2539982273 date "2002-12-04" @default.
- W2539982273 modified "2023-09-26" @default.
- W2539982273 title "A bipolar-EPROM (BI-EPROM) structure for 3.3 V operation and high speed application" @default.
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- W2539982273 doi "https://doi.org/10.1109/iedm.1990.237167" @default.
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