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• W2540042248 abstract "Three different passivation layers (SiN/sub x/, MgO and Sc/sub 2/O/sub 3/) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN/sub x/ produced /spl sim/80-85% recovery of the drain-source current, independent of whether SiH/sub 4//NH/sub 3/ or SiD/sub 4//ND/sub 3/ plasma chemistries were employed. Both the Sc/sub 2/O/sub 3/ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and /spl sim/80-95% recovery in AlGaN-cap structures. The Sc/sub 2/O/sub 3/ had superior long-term stability, with no change in HEMT behavior over 5 months aging." @default.
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• W2540042248 date "2003-06-25" @default.
• W2540042248 modified "2023-09-25" @default.
• W2540042248 title "Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors" @default.
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• W2540042248 doi "https://doi.org/10.1109/lechpd.2002.1146790" @default.
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