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- W2540261422 abstract "As technology advances into deep submicron nodes, the mask manufacturing process accuracy become moreimportant. Mask Process Correction (MPC) has been transitioning from Rules-Based Mask Process correction toModel-Based Mask Process Correction mode. MPC is a subsequent step to OPC, where additional perturbation isapplied to the mask shapes to correct for the mask manufacturing process. Shifting towards full model-based MPC isdriven mainly by the accuracy requirements in advanced technology nodes, both for DUV and EUV processes.In the current state-of-the-art MPC process, MPC is completely decoupled from OPC, where each of them assumesthat the other is executing perfectly. However, this decoupling is not suitable anymore due to the limited tolerance inthe mask CDU budget and the increased wafer CDU requirements required from OPC. It is becoming moreimportant to reduce any systematic mask errors, especially where they matter the most.In this work, we present a new combined-verification methodology that allows testing the combined effect of maskprocess and lithography process together and judging the final wafer patterning quality. This has the potential tointercept risks due to superposition of OPC and MPC correction residual errors, and capturing and correcting such apreviously hidden source of patterning degradation." @default.
- W2540261422 created "2016-11-04" @default.
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- W2540261422 date "2016-10-25" @default.
- W2540261422 modified "2023-09-23" @default.
- W2540261422 title "Combining mask and OPC process verification for improved wafer patterning and yield" @default.
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- W2540261422 doi "https://doi.org/10.1117/12.2246563" @default.
- W2540261422 hasPublicationYear "2016" @default.
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