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• W2541119475 abstract "A quasi-classical generation formulation is analytically developed for heavily doped silicon where electric field phenomena are important. This quasi-classical formalism is suitable for modeling thermal and electric field-dependent leakage mechanisms in semiconductor structures with multiple trap state types and populations. The formalism is valuable in the explanation of the heavily-doped gate-diode leakage characteristic in 4- to 64-Mb p/sup +/ substrate-plate-trench DRAM cells and p-channel MOSFETs. The development is implemented into a three-dimensional (3-D) finite-element device simulator (FIELDAY II), advancing VLSI device modeling. >" @default.
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• W2541119475 date "2002-12-04" @default.
• W2541119475 modified "2023-09-26" @default.
• W2541119475 title "Unified generation model with donor and acceptor-type trap states for heavily doped silicon" @default.
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• W2541119475 doi "https://doi.org/10.1109/iedm.1990.237159" @default.
• W2541119475 hasPublicationYear "2002" @default.
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