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• W2541463882 abstract "In this paper, the current injection efficiency (¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>injection</sub> ) and internal quantum efficiency (¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>IQE</sub> ) of InGaN QWs are investigated. Due to the existence of the polarization field in the InGaN QW, the band bending of the band edge potential leads to thermionic carrier escape from InGaN QW GaN barrier regions. The ¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>injection</sub> is the fraction of injected current that recombines in the QW active region, and the radiative efficiency (¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Radiative</sub> ) is the fraction of recombination current in QW that recombines radiatively. The ¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>IQE</sub> can be expressed as the product of ¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>injection</sub> and ¿ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Radiative</sub> . Here, the current injection efficiency model is developed based on current continuity relation for drift and diffusion carrier transport across the barrier, and the radiative efficiency model is based on self consistent 6-band k·p method." @default.
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• W2541463882 date "2009-12-01" @default.
• W2541463882 modified "2023-10-05" @default.
• W2541463882 title "Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes" @default.
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• W2541463882 doi "https://doi.org/10.1109/isdrs.2009.5378014" @default.
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