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- W2541570900 abstract "A new superjunction concept called Charge Sheet Superjunction (CSSJ) is proposed based on simulation studies; a fabrication procedure for practical realization of this concept is also suggested. The CSSJ structure is obtained by replacing the p-pillar of a conventional Superjunction (SJ) by a negative charge sheet. This structural modification minimizes the loss of conduction area to yield a lower specific on-resistance RONSP and tailors the 2-D field distribution so as to provide a slightly higher breakdown voltage VBR. Simulations show that, as compared to a SJ, the CSSJ has ~30% lower RONSP for VBR = 300 V, and ~20 % lower VBR sensitivity to 20% charge imbalance for VBR = 500 V and RONSP ~5 mOmega- cm2. One way a negative charge sheet could be realized is by the replacement of the p-pillar of the SJ with a thin Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layer; the interface between Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> and silicon has a negative fixed charge. Thus, fabrication of a CSSJ avoids the complex process involved in the realization of alternate n- and p- pillars." @default.
- W2541570900 created "2016-11-04" @default.
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- W2541570900 date "2007-12-01" @default.
- W2541570900 modified "2023-10-04" @default.
- W2541570900 title "Charge Sheet Superjunction (CSSJ) - A new superjunction concept" @default.
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- W2541570900 doi "https://doi.org/10.1109/iwpsd.2007.4472638" @default.
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