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- W2541603398 abstract "The cause of drain current (ID) drift in graphene field-effect transistors is analyzed and a method to suppress the drift is proposed. By analyzing ID-time characteristics, a condition of reasonable gate, drain and source biases (VG, VD, and VS) is proposed to suppress ID drift. Based on this result, we find a condition for VG during off-time (Vbase), VD, and VS in pulsed I-V measurement to obtain the intrinsic ID-VG curves, and analyze the effect of Vbase on the Dirac point shift. Through an analysis of ID-time characteristics depending on VG, ID drift according to the range of VG is explained." @default.
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- W2541603398 date "2015-08-24" @default.
- W2541603398 modified "2023-10-17" @default.
- W2541603398 title "Analysis and suppression of drain current drift in graphene FETs" @default.
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- W2541603398 doi "https://doi.org/10.1088/0268-1242/30/10/105013" @default.
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