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- W2542153670 abstract "This paper reports on the In x Ga 1−x N-based quantum well (QW) cell as a promising candidate for future high efficiency solar cells. The performances of the proposed quantum well cell are assessed using an analytical model and different device parameters are optimized. A maximum efficiency of 36.49% is obtained with at an optimized band gap of 1.38 eV and at a well depth of 0.2eV. The effects of well number on short circuit current density, open circuit voltage and on the conversion efficiency of the In x Ga 1−x N-based QW solar cell are also studied. The highest efficiency found for In x Ga 1−x N-based QW cell for 35 well was 40.2% while for Al x Ga 1−x As -based QW solar cell this was 35.55%. Comparison of In x Ga 1−x N-based QW solar cell and Al x Ga 1−x As -based QW solar cell implies that In x Ga 1−x N-based quantum well cell offers the better efficiency." @default.
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- W2542153670 date "2010-12-01" @default.
- W2542153670 modified "2023-09-22" @default.
- W2542153670 title "High efficiency In<inf>x</inf>Ga<inf>1−x</inf>N-based quantum well solar cell" @default.
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- W2542153670 doi "https://doi.org/10.1109/icelce.2010.5700798" @default.
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