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- W2544202477 abstract "The Bipolar Mode Field Effect Transistors (BMFETs) using P+ gates on N-type Silicon substrate are the most commonly used power devices for high-current medium-power switching applications and as optically controlled switches [1,2]. These are dual gate devices with deep P+ gate junctions, which require large thermal cycles for diffusion. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P-type 4H Silicon-Carbide [3,4], a wide bandgap material, in which the PN junction gates are replaced by the Schottky gates. We have studied the characteristics of this device using two-dimensional numerical simulation [5]. Our results demonstrate for the first time that the P-SiC Schottky-gate BMFET has very low ON voltage drop, good output characteristics, a reasonable current gain and a blocking voltage greater than 1000 V." @default.
- W2544202477 created "2016-11-04" @default.
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- W2544202477 date "2006-09-01" @default.
- W2544202477 modified "2023-09-23" @default.
- W2544202477 title "New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN Junction" @default.
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- W2544202477 doi "https://doi.org/10.1109/indcon.2006.302798" @default.
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