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- W2545347105 abstract "Abstract We present the effect of postannealing on the crystallization of low-temperature-grown (LTG) In x Ga 1− x As on a (001) InP substrate. LTG In 0.42 Ga 0.58 As with a thickness of 1.0 µm was grown directly on the substrate by molecular beam epitaxy at 180 °C. High-resolution X-ray diffraction reciprocal space mapping and cross-sectional transmission electron microscopy (TEM) indicate that the as-grown LTG-In 0.42 Ga 0.58 As layer comprises an amorphous layer above the substrate and a columnar crystal layer on top of the amorphous layer. The TEM images indicate that the thermally induced crystallization of the amorphous In 0.42 Ga 0.58 As crystal lattice-matched to the InP substrate occurs during annealing above 400 °C." @default.
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- W2545347105 date "2016-10-25" @default.
- W2545347105 modified "2023-09-25" @default.
- W2545347105 title "Effect of thermal annealing on the crystallization of low-temperature-grown In0.42Ga0.58As on InP substrate" @default.
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- W2545347105 doi "https://doi.org/10.7567/jjap.55.110313" @default.
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