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- W2546967114 abstract "A newly developed BPSG filled deep trench isolation technology featuring trench formation at the end of the front end process is presented. A thick BPSG film is used as a trench filling material and interlayer dielectrics under-first level metal simultaneously. The process step counts in deep trench isolation process module is 70% smaller than that of a conventional process. The thick BPSG planarized interlayer dielectrics film can reduce the wiring capacitance and provides a fine pitch interconnection for scaled CMOS. Using this technology, a high performance/low cost ECL-BiCMOS LSI is achieved." @default.
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- W2546967114 date "1995-09-01" @default.
- W2546967114 modified "2023-09-28" @default.
- W2546967114 title "A Premetal BPSG Filled Deep Trench Isolation Technology for ECL-BiCMOS LSIs using CMP" @default.
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