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- W2547176135 abstract "The Ag-Cu-In-Ga (ACIG) material system has been investigated over a composition range used for reaction to form (Ag,Cu)(In,Ga)Se <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin films for photovoltaic application. ACIG thin films were sputter deposited from Ag <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.77</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.23</sub> , Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.77</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.23</sub> , and In targets using different layer sequences with Ag/(Cu + Ag) and (Ag + Cu)/(Ga + In) ratios fixed at 0.25 and 0.90, respectively. The most uniform morphology was achieved with a Ag-Ga layer followed by a layer with co-sputtered Cu-Ga and In. Varying the sputtering sequence for stacked layers resulted in dissimilar morphologies and structural phases. X-ray diffraction analyses revealed that Ag-Ga and In layers intermix to form the (Ag,Cu)In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> phase in all Ag-containing samples except one with a Ag-Ga/Cu-Ga/In sequence. In addition, precursors were shown to be unstable during storage at room temperature, where a secondary (Ag,Cu <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>*</sup> )In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> phase with higher Cu content formed. Finally, phase composition of the precursors annealed at 300°C was characterized." @default.
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- W2547176135 date "2017-01-01" @default.
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- W2547176135 title "Ag–Cu–In–Ga Metal Precursor Thin Films for (Ag,Cu)(In,Ga)Se2 Solar Cells" @default.
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- W2547176135 doi "https://doi.org/10.1109/jphotov.2016.2615682" @default.
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