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- W2547667496 abstract "Abstract Ternary chalcogenide semiconductor copper germanium sulfide (Cu 2 GeS 3 ) composed of earth-abundant and non-toxic elements is considered to be a suitable light harvesting material for photovoltaics. In this study, Cu 2 GeS 3 thin film solar cells are creatively fabricated based on combustion method. XRD and Raman analyses reveal that the combustion synthesized product is composed of Cu-Ge alloy rather than metal oxides. The structural, morphological, optical and electrical properties of CGS films are analyzed in detail. The best power conversion efficiency of Cu 2 GeS 3 thin film solar cell achieve 2.67% with a high open-circuit voltage of 592 mV. The experiment results reveal that the p-type semiconductor Cu 2 GeS 3 is an extremely promising light harvesting material for photovoltaics due to its suitable band gap and carrier concentration." @default.
- W2547667496 created "2016-11-11" @default.
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- W2547667496 date "2017-02-01" @default.
- W2547667496 modified "2023-10-16" @default.
- W2547667496 title "High open-circuit voltage of ternary Cu2GeS3 thin film solar cells from combustion synthesized Cu-Ge alloy" @default.
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- W2547667496 doi "https://doi.org/10.1016/j.solmat.2016.11.001" @default.
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