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- W2547978678 abstract "Ion implantation in gallium arsenide (GaAs) has been extensively investigated for the VLSI industry and for the realisation of novel electronic devices such as micro and millimetre wave applications. A general advantage of ion-implantation induced electrical isolation is the lateral selectivity and preservation of surface planarity. In the present work, we systematically study the electrical isolation of n-type GaAs devices by single energy MeV/MeV-like implantation in which a constant level of damage caused by the isolating ion specie is maintained throughout the doped layer. It is observed that the maximum sheet resistivity values are dependent on sufficient damage accumulation in the layer for a specific isolation scheme. It is also found that the threshold dose (D/sub th/) to convert the n-type GaAs layer to a highly resistive one closely correlates with the estimated number of simulated lattice atomic displacements (N/sub d/) along the conductive region. Moreover, for identical samples, atomic mass of the implanted specie increases with the decrease of the threshold dose." @default.
- W2547978678 created "2016-11-11" @default.
- W2547978678 creator A5014137802 @default.
- W2547978678 creator A5061590852 @default.
- W2547978678 creator A5088392509 @default.
- W2547978678 date "2003-08-27" @default.
- W2547978678 modified "2023-09-27" @default.
- W2547978678 title "Electrical isolation of n-type GaAs devices by MeV/MeV-like implantation of various ion species" @default.
- W2547978678 cites W2007724593 @default.
- W2547978678 cites W2008413686 @default.
- W2547978678 cites W2023243356 @default.
- W2547978678 cites W2026419854 @default.
- W2547978678 cites W2039364511 @default.
- W2547978678 cites W2041015688 @default.
- W2547978678 cites W2057052551 @default.
- W2547978678 cites W2135476033 @default.
- W2547978678 cites W2987637782 @default.
- W2547978678 doi "https://doi.org/10.1109/edmo.2002.1174924" @default.
- W2547978678 hasPublicationYear "2003" @default.
- W2547978678 type Work @default.
- W2547978678 sameAs 2547978678 @default.
- W2547978678 citedByCount "0" @default.
- W2547978678 crossrefType "proceedings-article" @default.
- W2547978678 hasAuthorship W2547978678A5014137802 @default.
- W2547978678 hasAuthorship W2547978678A5061590852 @default.
- W2547978678 hasAuthorship W2547978678A5088392509 @default.
- W2547978678 hasConcept C119599485 @default.
- W2547978678 hasConcept C127413603 @default.
- W2547978678 hasConcept C145148216 @default.
- W2547978678 hasConcept C171250308 @default.
- W2547978678 hasConcept C178790620 @default.
- W2547978678 hasConcept C185592680 @default.
- W2547978678 hasConcept C192562407 @default.
- W2547978678 hasConcept C2779227376 @default.
- W2547978678 hasConcept C41823505 @default.
- W2547978678 hasConcept C49040817 @default.
- W2547978678 hasConcept C510052550 @default.
- W2547978678 hasConcept C57863236 @default.
- W2547978678 hasConcept C66825105 @default.
- W2547978678 hasConcept C6899612 @default.
- W2547978678 hasConcept C69990965 @default.
- W2547978678 hasConceptScore W2547978678C119599485 @default.
- W2547978678 hasConceptScore W2547978678C127413603 @default.
- W2547978678 hasConceptScore W2547978678C145148216 @default.
- W2547978678 hasConceptScore W2547978678C171250308 @default.
- W2547978678 hasConceptScore W2547978678C178790620 @default.
- W2547978678 hasConceptScore W2547978678C185592680 @default.
- W2547978678 hasConceptScore W2547978678C192562407 @default.
- W2547978678 hasConceptScore W2547978678C2779227376 @default.
- W2547978678 hasConceptScore W2547978678C41823505 @default.
- W2547978678 hasConceptScore W2547978678C49040817 @default.
- W2547978678 hasConceptScore W2547978678C510052550 @default.
- W2547978678 hasConceptScore W2547978678C57863236 @default.
- W2547978678 hasConceptScore W2547978678C66825105 @default.
- W2547978678 hasConceptScore W2547978678C6899612 @default.
- W2547978678 hasConceptScore W2547978678C69990965 @default.
- W2547978678 hasLocation W25479786781 @default.
- W2547978678 hasOpenAccess W2547978678 @default.
- W2547978678 hasPrimaryLocation W25479786781 @default.
- W2547978678 hasRelatedWork W1579481541 @default.
- W2547978678 hasRelatedWork W1588064570 @default.
- W2547978678 hasRelatedWork W1831558200 @default.
- W2547978678 hasRelatedWork W1964199802 @default.
- W2547978678 hasRelatedWork W1988497449 @default.
- W2547978678 hasRelatedWork W2002307958 @default.
- W2547978678 hasRelatedWork W2017501728 @default.
- W2547978678 hasRelatedWork W2059142617 @default.
- W2547978678 hasRelatedWork W2061777123 @default.
- W2547978678 hasRelatedWork W2106551671 @default.
- W2547978678 hasRelatedWork W2106715956 @default.
- W2547978678 hasRelatedWork W2137087750 @default.
- W2547978678 hasRelatedWork W2161317540 @default.
- W2547978678 hasRelatedWork W2496032648 @default.
- W2547978678 hasRelatedWork W2586078953 @default.
- W2547978678 hasRelatedWork W2750665126 @default.
- W2547978678 hasRelatedWork W3099532988 @default.
- W2547978678 hasRelatedWork W2046208849 @default.
- W2547978678 hasRelatedWork W2855078102 @default.
- W2547978678 hasRelatedWork W93698713 @default.
- W2547978678 isParatext "false" @default.
- W2547978678 isRetracted "false" @default.
- W2547978678 magId "2547978678" @default.
- W2547978678 workType "article" @default.