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• W2548165787 abstract "The beneficial effect of double SiGe:C diffusion barriers for CMOS device downscaling is clearly demonstrated. The diffusion barriers enable to finely tailor the doping profile both in the channel and S/D regions. A drastic reduction of short channel effects down to 35nm gate length and improved I/sub on//I/sub off/ compromise have been achieved with a double carbonated barrier architecture for both nMOS and pMOS. For pMOS, reduced junction depth and lower S/D region sheet resistance are achieved with highly LDD and HDD retrograde doping profiles thanks to limited boron diffusion. For nMOS, we evidence that carbonated epi multi-layers suppress the boron pockets diffusion and therefore the roll-off effect in short gate length devices due to localised over-doping." @default.
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• W2548165787 date "2005-04-19" @default.
• W2548165787 modified "2023-10-07" @default.
• W2548165787 title "Double SiGe:C diffusion barrier channel 40mn CMOS with improved short-channel performances" @default.
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• W2548165787 doi "https://doi.org/10.1109/iedm.2004.1419180" @default.
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