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• W2548553676 abstract "In this chapter, we discuss recent advances in quantum dot (QD) lasers for silicon photonics. First, evolution of InAs/GaAs QD lasers is overviewed including the first proposal in 1982, superior lasing characteristics theoretically forecasted, realization of the QD lasers in 1990s, and demonstration of temperature insensitive threshold current. Second, QD laser integration by flip-chip bonding is introduced as one of laser integration method on silicon. The assembly method of QD lasers onto silicon photonics circuit by flip-chip bonding is introduced and the applications of this technique to optical I/O core for board-to-board interconnection and to Si optical interposer for chip-to-chip interconnection are introduced. Third, wafer bonding is discussed for forming InAs/GaAs QD lasers on silicon substrates via metal intermediate bonding and direct bonding. After the process flow of wafer bonding and laser fabrication are discussed, the characteristics of the fabricated laser device are described. Finally, direct epitaxial growth for forming InAs/GaAs QD lasers on silicon substrates is discussed. InAs/GaAs QD laser structures on Si substrate by only using molecular beam epitaxy. A single epitaxy growth on a CMOS compatible silicon (001) on-axis substrate can form a QD laser structure. After the process flow of crystal growth and laser fabrication is introduced, the characteristics of the fabricated laser device are described." @default.
• W2548553676 created "2016-11-11" @default.
• W2548553676 creator A5001146133 @default.
• W2548553676 date "2019-01-01" @default.
• W2548553676 modified "2023-10-03" @default.
• W2548553676 title "Quantum dot lasers for silicon photonics" @default.
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• W2548553676 doi "https://doi.org/10.1016/bs.semsem.2019.07.007" @default.
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