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• W2548596149 abstract "Al/sub 0.26/Ga/sub 0.74/N/AlN/GaN heterostructures with a 1-nm-thick AIN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm/sup 2//Vs at room temperature and approximately 25000 cm/sup 2//Vs at 15 K with a sheet carrier density of approximately 1 /spl times/ 10/sup 13//cm/sup 2/. High-electron-mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm." @default.
• W2548596149 created "2016-11-11" @default.
• W2548596149 creator A5006697360 @default.
• W2548596149 creator A5013805067 @default.
• W2548596149 creator A5014510476 @default.
• W2548596149 creator A5035049755 @default.
• W2548596149 creator A5058087802 @default.
• W2548596149 creator A5069109330 @default.
• W2548596149 creator A5077039171 @default.
• W2548596149 creator A5081745245 @default.
• W2548596149 creator A5088366042 @default.
• W2548596149 date "2005-04-19" @default.
• W2548596149 modified "2023-09-26" @default.
• W2548596149 title "Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates" @default.
• W2548596149 cites W1971755117 @default.
• W2548596149 cites W1977241145 @default.
• W2548596149 cites W2017534859 @default.
• W2548596149 cites W2029837243 @default.
• W2548596149 cites W2062318159 @default.
• W2548596149 cites W2073280081 @default.
• W2548596149 cites W2082893424 @default.
• W2548596149 cites W2100883406 @default.
• W2548596149 cites W2104343482 @default.
• W2548596149 cites W2146966293 @default.
• W2548596149 cites W2153784824 @default.
• W2548596149 cites W2167125973 @default.
• W2548596149 cites W2545338580 @default.
• W2548596149 cites W2119290831 @default.
• W2548596149 doi "https://doi.org/10.1109/iedm.2004.1419366" @default.
• W2548596149 hasPublicationYear "2005" @default.
• W2548596149 type Work @default.
• W2548596149 sameAs 2548596149 @default.
• W2548596149 citedByCount "1" @default.
• W2548596149 crossrefType "proceedings-article" @default.
• W2548596149 hasAuthorship W2548596149A5006697360 @default.
• W2548596149 hasAuthorship W2548596149A5013805067 @default.
• W2548596149 hasAuthorship W2548596149A5014510476 @default.
• W2548596149 hasAuthorship W2548596149A5035049755 @default.
• W2548596149 hasAuthorship W2548596149A5058087802 @default.
• W2548596149 hasAuthorship W2548596149A5069109330 @default.
• W2548596149 hasAuthorship W2548596149A5077039171 @default.
• W2548596149 hasAuthorship W2548596149A5081745245 @default.
• W2548596149 hasAuthorship W2548596149A5088366042 @default.
• W2548596149 hasConcept C106782819 @default.
• W2548596149 hasConcept C110738630 @default.
• W2548596149 hasConcept C119599485 @default.
• W2548596149 hasConcept C120665830 @default.
• W2548596149 hasConcept C121332964 @default.
• W2548596149 hasConcept C127413603 @default.
• W2548596149 hasConcept C160671074 @default.
• W2548596149 hasConcept C165801399 @default.
• W2548596149 hasConcept C171250308 @default.
• W2548596149 hasConcept C172385210 @default.
• W2548596149 hasConcept C175665537 @default.
• W2548596149 hasConcept C189278905 @default.
• W2548596149 hasConcept C192562407 @default.
• W2548596149 hasConcept C2778871202 @default.
• W2548596149 hasConcept C2779227376 @default.
• W2548596149 hasConcept C2779283907 @default.
• W2548596149 hasConcept C2780064504 @default.
• W2548596149 hasConcept C49040817 @default.
• W2548596149 hasConcept C520434653 @default.
• W2548596149 hasConcept C79794668 @default.
• W2548596149 hasConceptScore W2548596149C106782819 @default.
• W2548596149 hasConceptScore W2548596149C110738630 @default.
• W2548596149 hasConceptScore W2548596149C119599485 @default.
• W2548596149 hasConceptScore W2548596149C120665830 @default.
• W2548596149 hasConceptScore W2548596149C121332964 @default.
• W2548596149 hasConceptScore W2548596149C127413603 @default.
• W2548596149 hasConceptScore W2548596149C160671074 @default.
• W2548596149 hasConceptScore W2548596149C165801399 @default.
• W2548596149 hasConceptScore W2548596149C171250308 @default.
• W2548596149 hasConceptScore W2548596149C172385210 @default.
• W2548596149 hasConceptScore W2548596149C175665537 @default.
• W2548596149 hasConceptScore W2548596149C189278905 @default.
• W2548596149 hasConceptScore W2548596149C192562407 @default.
• W2548596149 hasConceptScore W2548596149C2778871202 @default.
• W2548596149 hasConceptScore W2548596149C2779227376 @default.
• W2548596149 hasConceptScore W2548596149C2779283907 @default.
• W2548596149 hasConceptScore W2548596149C2780064504 @default.
• W2548596149 hasConceptScore W2548596149C49040817 @default.
• W2548596149 hasConceptScore W2548596149C520434653 @default.
• W2548596149 hasConceptScore W2548596149C79794668 @default.
• W2548596149 hasLocation W25485961491 @default.
• W2548596149 hasOpenAccess W2548596149 @default.
• W2548596149 hasPrimaryLocation W25485961491 @default.
• W2548596149 hasRelatedWork W1612583816 @default.
• W2548596149 hasRelatedWork W1965657625 @default.
• W2548596149 hasRelatedWork W1980114639 @default.
• W2548596149 hasRelatedWork W1989257021 @default.
• W2548596149 hasRelatedWork W1995724294 @default.
• W2548596149 hasRelatedWork W2011412555 @default.
• W2548596149 hasRelatedWork W2063079404 @default.
• W2548596149 hasRelatedWork W2097750050 @default.
• W2548596149 hasRelatedWork W2098643581 @default.
• W2548596149 hasRelatedWork W2106096608 @default.
• W2548596149 hasRelatedWork W2125222032 @default.
• W2548596149 hasRelatedWork W2126689936 @default.
• W2548596149 hasRelatedWork W2139309897 @default.
• W2548596149 hasRelatedWork W2142627383 @default.

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