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• W2548605084 abstract "Arsenic doped ZnO films are prepared using a pre-deposited GaAs finite surface source on sapphire substrates by a MOCVD method. Their conductivity and optical properties are closely related to the annealing process. The as-grown ZnO film shows n-type conductivity with weak FA emission. The in situ annealed sample shows p-type conductivity. The AsZn–2VZn acceptor level is confirmed by low-temperature photoluminescence measurement. The post annealed ZnO film appears to be n-type, which is attributed to the arsenic surface enrichment and the compensation of introduced donor like defects. Our method could be widely used in fabricating arsenic doped p-type ZnO related photoelectric devices." @default.
• W2548605084 created "2016-11-11" @default.
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• W2548605084 date "2016-11-04" @default.
• W2548605084 modified "2023-09-24" @default.
• W2548605084 title "Growth of arsenic doped ZnO films using a finite surface doping source by metal organic chemical vapor deposition" @default.
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• W2548605084 doi "https://doi.org/10.1364/ome.6.003733" @default.
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