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- W2548651983 abstract "Al/Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> O/Cu memristive devices created via a plasma oxidation step have previously demonstrated complete nonpolar switching behavior [1]. An additional material contamination control measure resulted in improved uniformity of I-V curve behavior but necessitated an initial forming step in most devices. The operation voltages were irrespective of switching style and top electrode (TE) size. The high resistance state resistance increased with decreasing TE size; the low resistance state resistance remained invariant. Lateral switching of memristive device pairs unambiguously indicated filament-based device switching. A voltage-driven Cu <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> O filament composition modulation switching mechanism is suggested instead of the popular Joule heating RESET mechanism." @default.
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- W2548651983 date "2012-10-01" @default.
- W2548651983 modified "2023-09-23" @default.
- W2548651983 title "Experimentally demonstrated filament-based switching mechanism for Al/Cu<inf>x</inf>O/Cu memristive devices" @default.
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- W2548651983 doi "https://doi.org/10.1109/iirw.2012.6468954" @default.
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