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• W2548675189 abstract "Abstract Tungsten diselenide (WSe 2 ) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe 2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe 2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe 2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe 2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe 2 film texture. Based on the stress state of the W film, a model for growth of the WSe 2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe 2 film." @default.
• W2548675189 created "2016-11-11" @default.
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• W2548675189 date "2016-11-04" @default.
• W2548675189 modified "2023-09-26" @default.
• W2548675189 title "Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization" @default.
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• W2548675189 doi "https://doi.org/10.1038/srep36451" @default.
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