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• W2548681623 abstract "Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O with the main stream semiconductor devices and circuits. In this paper, we report single-mode Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of Mg <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /ng is demonstrated" @default.
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• W2548681623 date "2006-01-18" @default.
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• W2548681623 title "Studies on Mg/sub x/Zn/sub 1-x/O thin film resonator for mass sensor application" @default.
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• W2548681623 doi "https://doi.org/10.1109/freq.2005.1573916" @default.
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