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- W2548791710 abstract "In this paper, a new numerical model for the three-dimensional simulation of thermal oxidation of silicon is presented. The model takes into account that the diffusion of oxidants, the chemical reaction, and the volume increase occur simultaneously in a so-called reactive layer. This reactive layer has a spatial finite width, in contrast to the sharp interface between silicon and silicon dioxide in the conventional formulation. The oxidation process is numerically described with a coupled system of equations for reaction, diffusion, and displacement. In order to solve the numerical formulation of the oxidation process, the finite element scheme is applied." @default.
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- W2548791710 date "2004-03-23" @default.
- W2548791710 modified "2023-09-23" @default.
- W2548791710 title "Simulation of thermal oxidation: a three-dimensional finite element approach" @default.
- W2548791710 cites W2098708969 @default.
- W2548791710 doi "https://doi.org/10.1109/essderc.2003.1256894" @default.
- W2548791710 hasPublicationYear "2004" @default.
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