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• W2548827910 abstract "In-plane and out-of-plane oriented (11 2macr 0) textured AlN thin films are attractive for shear mode piezoelectric devices and sensors, such as FBAR and SH-SAW devices. It is proposed here that highly oriented (11 2macr0) AlN thin films can be fabricated using ion beam sputter-deposition system with grazing incidence to the substrate surface. Full-width-at-half-maximum (FWHM) values of the omega-scan rocking curve and phi-scan profile curves of the (11 2macr2) X-ray diffraction poles were measured to be 4.6deg and 23deg, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 2macr0) textured AlN film excited pure-shear wave without any longitudinal wave excitation. New device structure is expected because this film can be deposited on various substrates and curved surfaces." @default.
• W2548827910 created "2016-11-11" @default.
• W2548827910 creator A5081698177 @default.
• W2548827910 creator A5089744443 @default.
• W2548827910 date "2008-11-01" @default.
• W2548827910 modified "2023-09-29" @default.
• W2548827910 title "Pure-shear mode BAW resonator consisting of (112&#x0304;0) textured AlN films" @default.
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• W2548827910 doi "https://doi.org/10.1109/ultsym.2008.0022" @default.
• W2548827910 hasPublicationYear "2008" @default.
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