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- W2550278329 abstract "Hillocks on N-face GaN (0001¯) films are effectively eliminated by group-III-source flow-rate modulation epitaxy (FME), wherein the flow-rate of group-III sources are sequentially modulated under a constant supply of NH3. A hillock-free smooth surface obtained by group-III-source FME is attributed to the enhancement of step-flow growth. We found that a hillock originates from a micropipe and grows by spiral growth around the micropipe. The spiral growth rate rapidly decreases with decreasing the degree of surface supersaturation σ, while the step-flow growth rate decreases linearly. For group-III-source FME, wherein σ is lower than conventional continuous growth, the spiral growth rate could be lower than the step-flow growth one so that the formation of hillocks is suppressed." @default.
- W2550278329 created "2016-11-30" @default.
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- W2550278329 date "2017-06-01" @default.
- W2550278329 modified "2023-09-24" @default.
- W2550278329 title "Surface supersaturation in flow-rate modulation epitaxy of GaN" @default.
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- W2550278329 doi "https://doi.org/10.1016/j.jcrysgro.2016.11.107" @default.
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