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- W2550544047 abstract "Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards 〈110〉 at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×10 17 cm -3 . In addition, the reduction of GaSb lattice parameter with Be doping was studied." @default.
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- W2550544047 date "2016-10-30" @default.
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- W2550544047 title "p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy" @default.
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- W2550544047 doi "https://doi.org/10.5573/jsts.2016.16.5.695" @default.
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