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• W2551768271 startingPage "114004" @default.
• W2551768271 abstract "The effects of the physical damages induced by heavy ion irradiation on the performance of partially-depleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance, and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design." @default.
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• W2551768271 date "2015-11-01" @default.
• W2551768271 modified "2023-09-27" @default.
• W2551768271 title "Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices" @default.
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• W2551768271 doi "https://doi.org/10.1088/1674-4926/36/11/114004" @default.
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