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- W2551948744 abstract "Our recent progresses in epitaxial Ge-on-Si technology are presented from the viewpoints of near-infrared (NIR) photonic device applications. In Si photonics, high-quality Ge layers on Si are inevitably required for NIR photodetectors with high-speed and high-efficiency operations together with a low noise operation. Epitaxial growth of Ge on Si is useful for the monolithic integrations, while a high density of threading dislocations are generated in Ge due to the 4% lattice mismatch, which act as generation/recombination of carriers to degrade the device performances. As in Ref. [1], post-growth annealing of Ge at a temperature more than ∼ 750°C is effective to reduce the threading dislocation density. Here, new annealing technologies are examined for Ge-based photonic devices. One is the post-“buffer”-growth annealing, i.e., a high-temperature annealing performed after the growth of thin (< 100 nm) Ge buffer layer formed below 400°C. This post-buffer-growth annealing is found to be effective, as confirmed by a reduction of dark leakage current in the Ge pin photodiodes on Si. Another example is the post-growth NIR “laser” annealing [2]. This allows the thermal budget as low as possible, since the NIR laser light is selectively absorbed in Ge, enabling a selective annealing of Ge with keeping Si at a low temperature. The laser annealing allows a short-time annealing below 1 s. The density of threading dislocations can be reduced in such a short time, while the diffusion of dopant atoms in Ge as well as Si atoms from the substrate is prevented efficiently. In fact, the laser annealing well works even after the formation of pin junctions in Ge." @default.
- W2551948744 created "2016-11-30" @default.
- W2551948744 creator A5042133585 @default.
- W2551948744 date "2016-08-01" @default.
- W2551948744 modified "2023-09-30" @default.
- W2551948744 title "Ge-based photonic devices on Si" @default.
- W2551948744 doi "https://doi.org/10.1109/piers.2016.7734725" @default.
- W2551948744 hasPublicationYear "2016" @default.
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