Matches in SemOpenAlex for { <https://semopenalex.org/work/W2553600051> ?p ?o ?g. }
- W2553600051 abstract "In this chapter the ability to study atomic processes on the Si surface during sublimation, growth, oxygen etching, and gold adsorption by in situ ultrahigh vacuum reflection electron microscopy (a unique method developed in ISP SB RAS) are reviewed. Using this technique, a surface instability called the step-bunching phenomenon was discovered previously, it is however, still poorly understood due to many unknown parameters of adatom/advacancy step interactions. Observation of gold adsorption induced step-bunching depending on an annealing time at a temperature of T =900°C suggests that a surface-bulk defect exchange is also involved in the formation of instability. The dynamics of two-dimensional vacancy island formation on 120-µm step-free terraces shows that sublimation is defined by adatom detachment from steps up to a critical temperature of T crit ~1180°C, while adatom diffusion length falls from ~55 (970°C) to ~7 µm due to recombination with the vacancies. At T crit >1180°C, sublimation is dominated by the straightforward evaporation of surface atoms reserving vacancies that interact with steps. From the studies of Si growth on the step-bunched Si(111)-(7×7) surface, a crucial role of step permeability in 2D island nucleation and growth (2DNG) kinetics has been revealed. Step permeability is a key factor in pyramid-like growth on terraces exceeding the critical width for 2DNG. We show that quantitative parameters of adatom/vacancy diffusion and their interactions with steps (Schwobel barriers) can be determined." @default.
- W2553600051 created "2016-11-30" @default.
- W2553600051 creator A5000134380 @default.
- W2553600051 creator A5004707914 @default.
- W2553600051 creator A5031208797 @default.
- W2553600051 creator A5032394330 @default.
- W2553600051 creator A5045550154 @default.
- W2553600051 creator A5048918040 @default.
- W2553600051 creator A5063435664 @default.
- W2553600051 creator A5065770684 @default.
- W2553600051 creator A5066453716 @default.
- W2553600051 date "2017-01-01" @default.
- W2553600051 modified "2023-10-17" @default.
- W2553600051 title "Atomic Processes on the Silicon Surface" @default.
- W2553600051 cites W1667610642 @default.
- W2553600051 cites W1965571863 @default.
- W2553600051 cites W1967742233 @default.
- W2553600051 cites W1968443377 @default.
- W2553600051 cites W1970087480 @default.
- W2553600051 cites W1972958556 @default.
- W2553600051 cites W1973308943 @default.
- W2553600051 cites W1974568777 @default.
- W2553600051 cites W1979385897 @default.
- W2553600051 cites W1981575619 @default.
- W2553600051 cites W1982072028 @default.
- W2553600051 cites W1984240769 @default.
- W2553600051 cites W1984271911 @default.
- W2553600051 cites W1984386168 @default.
- W2553600051 cites W1986037279 @default.
- W2553600051 cites W1987639561 @default.
- W2553600051 cites W1990910702 @default.
- W2553600051 cites W1993975719 @default.
- W2553600051 cites W1994078084 @default.
- W2553600051 cites W1994411965 @default.
- W2553600051 cites W1998553183 @default.
- W2553600051 cites W1998563353 @default.
- W2553600051 cites W2005702363 @default.
- W2553600051 cites W2009459942 @default.
- W2553600051 cites W2009750572 @default.
- W2553600051 cites W2016704976 @default.
- W2553600051 cites W2017504486 @default.
- W2553600051 cites W2017533568 @default.
- W2553600051 cites W2017594175 @default.
- W2553600051 cites W2020361642 @default.
- W2553600051 cites W2022872311 @default.
- W2553600051 cites W2023177395 @default.
- W2553600051 cites W2026624748 @default.
- W2553600051 cites W2026872340 @default.
- W2553600051 cites W2027652526 @default.
- W2553600051 cites W2031723554 @default.
- W2553600051 cites W2036462466 @default.
- W2553600051 cites W2039222176 @default.
- W2553600051 cites W2042279438 @default.
- W2553600051 cites W2045621474 @default.
- W2553600051 cites W2048523085 @default.
- W2553600051 cites W2051664752 @default.
- W2553600051 cites W2052659720 @default.
- W2553600051 cites W2053177939 @default.
- W2553600051 cites W2057056164 @default.
- W2553600051 cites W2057606258 @default.
- W2553600051 cites W2060461592 @default.
- W2553600051 cites W2066038783 @default.
- W2553600051 cites W2067564907 @default.
- W2553600051 cites W2067919169 @default.
- W2553600051 cites W2067965327 @default.
- W2553600051 cites W2069243810 @default.
- W2553600051 cites W2073406421 @default.
- W2553600051 cites W2079119911 @default.
- W2553600051 cites W2080537075 @default.
- W2553600051 cites W2082939142 @default.
- W2553600051 cites W2084984495 @default.
- W2553600051 cites W2088252384 @default.
- W2553600051 cites W2090256122 @default.
- W2553600051 cites W2091420226 @default.
- W2553600051 cites W2091527667 @default.
- W2553600051 cites W2096285801 @default.
- W2553600051 cites W2119828882 @default.
- W2553600051 cites W2149086150 @default.
- W2553600051 cites W2318582678 @default.
- W2553600051 cites W2467813680 @default.
- W2553600051 cites W2470859162 @default.
- W2553600051 cites W3023833666 @default.
- W2553600051 cites W3125943086 @default.
- W2553600051 cites W4238174890 @default.
- W2553600051 cites W4240957908 @default.
- W2553600051 cites W4253876581 @default.
- W2553600051 cites W4299820273 @default.
- W2553600051 cites W2071922993 @default.
- W2553600051 cites W2073902355 @default.
- W2553600051 doi "https://doi.org/10.1016/b978-0-12-810512-2.00008-1" @default.
- W2553600051 hasPublicationYear "2017" @default.
- W2553600051 type Work @default.
- W2553600051 sameAs 2553600051 @default.
- W2553600051 citedByCount "4" @default.
- W2553600051 countsByYear W25536000512021 @default.
- W2553600051 countsByYear W25536000512022 @default.
- W2553600051 crossrefType "book-chapter" @default.
- W2553600051 hasAuthorship W2553600051A5000134380 @default.
- W2553600051 hasAuthorship W2553600051A5004707914 @default.
- W2553600051 hasAuthorship W2553600051A5031208797 @default.