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• W2553678594 abstract "We introduce a continuum model of deposition and surface diffusion tackling semiconductor heteroepitaxy also in the presence of misfit dislocations. During the evolution defects are inserted on the fly whenever their presence lowers the energy of the system, and the corresponding stress field is added to the one produced by lattice mismatch. An application to Ge/Si is provided. The wealth of qualitatively different behaviors experimentally reported in the literature is reproduced." @default.
• W2553678594 created "2016-11-30" @default.
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• W2553678594 date "2016-11-16" @default.
• W2553678594 modified "2023-09-25" @default.
• W2553678594 title "Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films" @default.
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• W2553678594 doi "https://doi.org/10.1103/physrevb.94.205304" @default.
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